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HCS Hall Effect Measurement System|Comprehensive Analysis of Carrier Concentration, Mobility, and Electrical Properties

Product details

Hall Effect Measurement System|HCS Series

The HCS (Hall Characterization System) is a core platform for carrier property characterization in semiconductor and electronic material research. It enables complete measurement of carrier mobility, electrical resistivity, carrier concentration, and Hall coefficient. The system is suitable for a wide range of materials, including Si, SiGe, SiC, GaAs, InGaAs, InP, GaN (n-type and p-type), metal films, oxides, and related electronic materials.

With different sample holders, permanent magnets, or electromagnets, the magnetic field strength can reach up to ±1 T (depending on the model). Optional liquid-nitrogen cooling and high-temperature furnaces (up to 700°C) allow electrical property evaluation over a wide temperature range. The measurement software provides intuitive I–V and I–R graphical interfaces, enabling quick verification of Hall measurement quality.

Measurement Capabilities

  • Carrier concentration
  • Electrical resistivity / electrical conductivity
  • Carrier mobility
  • Hall coefficient
  • α (horizontal / vertical resistance ratio)
  • Magnetoresistance measurement

Applicable Standards (Electrical Properties)

ASTM F76-08: Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors

HCS Hall Effect Measurement System Series Comparison

Function / Specification HCS 1 HCS 10 HCS 100
Sample conductivity range High conductivity samples Medium conductivity samples Low conductivity / high-resistance samples
Carrier concentration range ~1018 cm-3 ~1017 cm-3 ~1014 cm-3
Mobility resolution Standard resolution Medium to high resolution Ultra-high resolution
Measurable parameters Hall coefficient, carrier concentration, resistivity, mobility, magnetoresistance
Magnetic field control ±0.5 T (manual) ±1 T (programmable) ±1 T (fully automated)
Temperature range (standard) RT RT ~ 500°C (optional) LN2 ~ 800°C (low-temp + high-temp furnace)
Supported sample size Standard square and round samples Modular holders for multiple sizes Multi-size + thin-film / nanostructures (optional)
Typical users Education and basic electrical measurements R&D institutes and material laboratories Advanced material analysis, semiconductor and thermoelectric evaluation

Video: HCS Hall Effect System Demonstration (YouTube)


 
CONTACT
Sales Contact|Allen Kuo
Hall Effect Measurement System Consultation

Mobile: 0919-138-108

Email: Allen.kuo@fstintl.com.tw